HMC757LP4E Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC WATT POWER AMPLIFIER, 16 - 24 GHz

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Typical Applications
The HMC757LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
9
• Military & Space
Functional Diagram
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: 27.5 dBm @ 21% PAE
High Output IP3: 34.5 dBm
High Gain: 20.5 dB
DC Supply: +5V @ 400 mA
No External Matching Required
24 Lead 4x4 mm SMT Package: 16 mm²
General Description
The HMC757LP4E is a three stage GaAs pHEMT
MMIC 1 Watt Power Amplifier which operates be-
tween 16 and 24 GHz. The HMC757LP4E provides
20.5 dB of gain, and 27.5 dBm of saturated output
power and 21% PAE from a +5V supply. The RF I/Os
are DC blocked and matched to 50 Ohms. The 4x4
mm plastic package eliminates the need for wirebon-
dig, and is compatible with surface mount manufactur-
ing techniques.
Electrical Specifications, T_A = +25° C, Vdd = +5V, Idd = 400mA ^[1]
Parameter
Min.
Typ.
Frequency Range
16 - 24
Gain
18.5
20.5
Gain Variation Over Temperature
0.028
Input Return Loss
11
Output Return Loss
12
Output Power for 1 dB Compression (P1dB)
24.5
26.5
Saturated Output Power (Psat)
27.5
Output Third Order Intercept (IP3)^[2]
34.5
Total Supply Current (Idd)
400
[1] Adjust Vgg between -2 to 0V to achieve Idd = 400 mA typical.
[2] Measurement taken at Pout / Tone = +16 dBm
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]