HMC757LP4E Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC WATT POWER AMPLIFIER, 16 - 24 GHz

v00.0610
Gain & Power vs.
Supply Current @ 20 GHz
35
30
25
9
20
15
Gain
P1dB
Psat
10
350
360
370
380
390
400
Idd (mA)
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Gain & Power vs.
Supply Voltage @ 20 GHz
35
30
25
Gain
P1dB
Psat
20
15
10
5
5.5
6
6.5
7
Vdd (V)
Power Dissipation
2.5
16 GHz
2.3
18 GHz
20 GHz
22 GHz
24 GHz
2.1
1.9
1.7
1.5
-18
-14
-10
-6
-2
2
INPUT POWER (dBm)
6
10
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 40 mW/°C above 85 °C)
Thermal Resistance
(channel to exposed ground paddle)
Storage Temperature
Operating Temperature
7V
23 dBm
150 °C
2.7 W
24.85 C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+5.0
400
+5.5
400
+6.0
400
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 400 mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]