HMC637LP5 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

v02.0709
HMC637LP5 / 637LP5E
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Pin Descriptions
Pin Number
1, 3, 4, 6 - 12,
14, 17, 18, 19,
20, 22 - 28,
31, 32
Function
N/C
2
Vgg2
Description
No connection. These pins may be connected to RF
ground. Performance will not be affected.
Gate Control 2 for amplifier. +5V should be applied to
Vgg2 for nominal operation. Attach bypass capacitor
per application circuit herein.
5
RFIN
This pad is DC coupled
and matched to 50 Ohms.
Gate Control 1 for amplifier. Attach bypass capacitor
13
Vgg1
per application circuit herein. Please follow “MMIC
Amplifier Biasing Procedure” Application Note.
15
16
21
29
30
Ground
Paddle
ACG4
ACG3
RFOUT & Vdd
ACG2
ACG1
GND
Low frequency termination. Attach bypass capacitor
per application circuit herein.
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
Low frequency termination. Attach bypass capacitor
per application circuit herein.
Ground paddle must be connected to RF/DC ground.
Interface Schematic
9
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Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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