HMC637LP5 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

v02.0709
Typical Applications
The HMC637LP5(E) wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
9
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC637LP5 / 637LP5E
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Features
P1dB Output Power: +29 dBm
Gain: 13 dB
Output IP3: +40 dBm
50 Ohm Matched Input/Output
32 Lead 5x5mm Lead SMT Package: 25mm²
General Description
The HMC637LP5(E) is a GaAs MMIC MESFET
Distributed Power Amplifier which operates bet-
ween DC and 6 GHz. The amplifier provides 13 dB
of gain, +40 dBm output IP3 and +29 dBm of output
power at 1 dB gain compression while requiring 400
mA from a +12V supply. Gain flatness is excellent at
±0.75 dB from DC - 6 GHz making the HMC637LP5(E)
ideal for EW, ECM, Radar and test equipment
applications. The HMC637LP5(E) amplifier I/Os
are internally matched to 50 Ohms and the 5x5 mm
QFN package is compatible with high volume SMT
assembly equipment.
9-1
Electrical Specifications, T_A = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA*
Parameter
Min.
Frequency Range
Gain
12
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
27
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
320
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
Typ.
DC - 6
13
±0.75
0.025
12
15
29
29.5
40
5
400
Max.
480
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]