HMC637LP5 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

v02.0709
Outline Drawing
HMC637LP5 / 637LP5E
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
9
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC637LP5
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC637LP5E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
100% matte Sn
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
H637
XXXX
H637
XXXX
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]