HMC637LP5 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

v02.0709
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +12 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 87 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+14 Vdc
-3 to 0 Vdc
+4 to +7 Vdc
+25 dBm
150 °C
5.7 W
11.5 °C/W
-65 to 150 °C
-40 to 85 °C
HMC637LP5 / 637LP5E
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Typical Supply Current vs. Vdd
Vdd (V)
11.5
12.0
12.5
Idd (mA)
373
400
425
ELECTROSTATIC SENSITIVE DEVICE
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OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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