HMC414MS8G_01 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

v01.1201
MICROWAVE CORPORATION
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Pin Descriptions
Pin Number
Function
Description
1
Interface Schematic
1
RF IN
This pin is AC coupled and matched to 50 Ohms from 2.2 to 2.8 GHz.
2
NC
Not Connected
3, 4
RF OUT
RF output and DC bias for the output stage.
Ground: Backside of package has exposed metal ground slug that must
5
GND
be connected to ground thru a short path. Vias under the device are
required.
Power control pin. For maximum power, this pin should be connected
6, 8
Vpd1, Vpd2
to 3.6V. For 5V operation, a dropping resistor is required. A higher
voltage is not recommended. For lower idle current, this voltage can be
reduced.
7
Vcc
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]
1 - 219