HMC414MS8G_01 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

v01.1201
MICROWAVE CORPORATION
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
1
Absolute Maximum Ratings
Supply Voltage (Vcc)
Control Voltage (Vpd)
Input Power (RFin)
Channel Temperature (Tc)
Continuous Pdiss (T= 85 °C)
(derate 27 mW/°C above 85 °C)
Storage Temperature
Operating Temperature
+5.5 Vdc
+4.0 Vdc
+20 dBm
150 °C
1.73 W
-65 to +150° C
-40 to +85° C
Pin Locations & Outline Drawing
1 - 218
1. MATERIAL:
A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED
PLASTIC, SILICA & SILICONE INPREGNATED.
B. LEADFRAME MATERIAL: COPPER ALLOY
2. PLATING: LEAD-TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH
USING WHITE INK, LOCATED APPROX AS SHOWN
5. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.25mm PER SIDE.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]