HMC414MS8G_01 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

v01.1201
MICROWAVE CORPORATION
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Typical Applications
1
This amplifier is ideal for use as a power
amplifier for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Functional Diagram
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5.0 V
Power Down Capability
Low External Part Count
General Description
The HMC414MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
2.2 and 2.8 GHz. The amplifier is packaged in
a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifier provides 20 dB of gain,
+30 dBm of saturated power at 32% PAE from
a +5.0V supply voltage. The amplifier can also
operate with a 3.6V supply. Vpd can be used for
full power down or RF output power/current con-
trol.
Electrical Specifications, T_A = +25° C, As a Function of Vs, Vpd = 3.6V
Parameter
Vs= 3.6V
Min.
Typ.
Max.
Vs= 5.0V
Min.
Typ.
Max.
Frequency Range
2.2 - 2.8
2.2 - 2.8
Gain
17
20
25
17
20
25
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
Input Return Loss
3
8
3
8
Output Return Loss
6
9
6
9
Output Power for 1 dB Compression (P1dB)
21
25
23
27
Saturated Output Power (Psat)
23
27
26
30
Output Third Order Intercept (IP3)
30
35
35
39
Noise Figure
6.5
7.0
Supply Current (Icc)
Vpd= 0V/3.6V
0.002 / 240
0.002 / 300
Control Current (Ipd)
7
7
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
1 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]