HMC566LP4E_10 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz

v02.0609
7
P1dB vs. Temperature
18
16
14
12
10
8
+25 C
+85 C
6
- 40 C
4
26
28
30
32
34
36
38
FREQUENCY (GHz)
HMC566LP4E
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
Psat vs. Temperature
18
16
14
12
10
8
+25 C
+85 C
6
- 40 C
4
26
28
30
32
34
36
38
FREQUENCY (GHz)
7-3
Output IP3 vs. Temperature
30
28
26
24
22
20
+25 C
+85 C
18
- 40 C
16
14
26
28
30
32
34
36
38
FREQUENCY (GHz)
Gain, Noise Figure & Power vs.
Supply Voltage @ 32 GHz
30
27
24
21
18
15
12
9
6
3
0
2.5
Gain
P1dB
3
Vdd (V)
10
9
8
7
6
5
4
Noise Figure ³
2
1
0
3.5
Power Compression @ 32 GHz
25
20
15
Pout
Gain
PAE
10
5
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3, 4)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 9.6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+3.5 V
+5 dBm
175 °C
0.8 W
104 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]