HMC464LP5 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz

v00.0304
MICROWAVE CORPORATION
HMC464LP5
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
8
P1dB^Gv^as^A. T^sem^Mp^Mer^Ia^Ctu^Sre^{UB-HARMONICALLY} P^Ps^Uat^Mv^Ps.^ETe^Dm^Mpe^Ir^Xat^Eu^Rre ^{17 - 25 GHz}
30
30
28
28
26
26
24
24
22
22
20
20
18
+25C
16
+85C
-40C
14
18
+25C
16
+85C
-40C
14
12
12
10
0 2 4 6 8 10 12 14 16 18 20 22
10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
36
34
32
30
28
26
24
+25C
22
+85C
-40C
20
18
16
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Gain, Power & OIP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
32
30
28
26
24
22
20
18
16
14
12
10
7.5
Gain
P1dB
Psat
OIP3
8
8.5
SUPPLY VOLTAGE (Vdc)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFin)(Vdd = +8.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+9.0 Vdc
-2.0 to 0 Vdc
(Vdd -8.0) Vdc to Vdd
+23 dBm
150 °C
3.35 W
19.4 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
292
290
288
8 - 270
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com