HMC464LP5 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz

v00.0304
MICROWAVE CORPORATION
HMC464LP5
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
8
Typical Applications
The HMC464LP5 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C³I
• Test Instrumentation
• Fiber Optics
Functional Diagram
Features
+26 dBm P1dB Output Power
Gain: 14 dB
+30 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
25 mm² Leadless SMT Package
General Description
The HMC464LP5 is a GaAs MMIC PHEMT Dis-
tributed Power Amplifier in a leadless 5 x 5 mm
surface mount package which operates between
2 and 20 GHz. The amplifier provides 14 dB of
gain, +30 dBm output IP3 and +26 dBm of output
power at 1 dB gain compression while requiring
290 mA from a +8V supply. Gain flatness is good
from 2 - 18 GHz making the HMC464LP5 ideal
for EW, ECM and radar driver amplifier as well as
test equipment applications. The wideband ampli-
fier I/O’s are internally matched to 50 Ohms.
8 - 268
Electrical Specifications, T_A = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.)
Min.
Typ.
Max.
2.0 - 6.0
12
14
±0.5
0.025 0.035
15
15
23.5
26.5
27.5
32
4.0
290
Min.
Typ.
Max.
6.0 - 16.0
11.5
13.5
±0.5
0.03
0.04
10
9
22
25
26
26
4.0
290
Min.
Typ.
Max.
16.0 - 20.0
8
11
±1.0
0.05
0.06
7
11
18
21
24.0
22
6.0
290
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com