HMC686LP4 Datasheet, PDF (10/18 Pages) Hittite Microwave Corporation – BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz

v05.0509
HMC686LP4 / 686LP4E
BiCMOS MIXER W/ INTEGRATED
LO AMPLIFIER, 700 - 1500 MHz
1.4 - 1.5 GHz RF LTE Band Performance ^[1]
Upconverter Performance
Conversion Gain vs. LO Drive ^[2]
-6
Upconverter Performance
Input IP3 vs. LO Drive ^{[2] [3]}
35
-7
-8
-9
-10
-3 dBm
0 dBm
+3 dBm
-11
34
33
-3 dBm
0 dBm
+3 dBm
32
31
30
29
-12
1.2
1.3
1.4
1.5
1.6
1.7
RF FREQUENCY (GHz)
28
1.2
1.3
1.4
1.5
1.6
1.7
RF FREQUENCY (GHz)
10
Harmonics of LO ^[4]
nLO Spur @ RF Port
LO Freq. (GHz)
1
2
3
4
0.75
28
40
40
39
0.85
25
34
60
33
0.95
23
29
32
31
1.05
23
28
36
26
1.15
26
23
38
34
1.25
33
19
44
34
1.35
39
18
39
38
LO = 0 dBm
All values in dBc below input LO level measured at RF port
MxN Spurious @ IF Port ^[4]
nLO
mRF
0
1
2
3
4
0
xx
41
17
31
40
1
26
0
28
17
46
2
52
50
50
62
58
3
80
66
87
71
87
4
98
97
98
97
98
RF Freq. = 0.9 GHz @ 0 dBm
LO Freq. = 1.0 GHz @ 0 dBm
All values in dBc below IF power level (-1RF + 1LO).
Absolute Maximum Ratings
RF / IF Input (Vcc1,2,3 = +5V)
LO Drive (Vcc1,2,3 = +5V)
Vcc1,2,3
Channel Temperature
Continuous Pdiss (T = 85°C)
(derate 19 mW/°C above 85°C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+23 dBm
+10 dBm
+5.5V
125 °C
0.76 W
52 °C/W
-65 to 150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vcc
Vcc1,2,3 (V)
Icc Total (mA)
4.75
100
5.00
105
5.25
110
Product will operate over full voltage range shown above.
[1] See 1.4 - 1.5 GHz RF LTE Band Evaluation PCB
and schematic.
[2] G_Bias = +2.5V, IF = 140 MHz
[3] Two-tone input power = +9 dBm each tone,
1 MHz spacing
[4] See 0.7 - 1.1 GHz RF Band Evaluation PCB
and schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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