HMC686LP4 Datasheet, PDF (1/18 Pages) Hittite Microwave Corporation – BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz

HMC686LP4 / 686LP4E
v05.0509
BiCMOS MIXER W/ INTEGRATED
LO AMPLIFIER, 700 - 1500 MHz
10
10 - 1
Typical Applications
The HMC686LP4(E) is Ideal for:
• Cellular/3G & LTE/WiMAX/4G
• Basestations & Repeaters
• GSM, CDMA & OFDM
• Transmitters and Receivers
Features
High Input IP3: +34 dBm
7.5 dB Conversion Loss @ 0 dBm LO
Optimized to High Side LO Input for
0.7 - 1.1 GHz RF Band
Optimized to Low Side LO Input for
1.4 - 1.5 GHz RF Band
Adjustable Supply Current
24 Lead 4x4mm SMT Package: 16mm²
Functional Diagram
General Description
The HMC686LP4(E) is a high dynamic range passive
MMIC mixer with integrated LO amplifier in a 4x4
SMT QFN package covering 0.7 to 1.1 GHz. Excellent
input IP3 performance of +34 dBm for down conver-
sion is provided for 3G & 4G GSM/CDMA applications
at an LO drive of 0 dBm. With an input 1 dB com-
pression of +25 dBm, the RF port will accept a wide
range of input signal levels. Conversion loss is 7.5 dB
typical. The DC to 500 MHz IF frequency response
will satisfy GSM/CDMA transmit or receive frequ-
ency plans. The HMC686LP4(E) is optimized to high
side LO frequency plans for 0.7 - 1.1 GHz RF Band
and is pin for pin compatible with the HMC684LP4(E)
which is a 0.7 - 1.0 GHz converter optimized for low
side LO. The HMC686LP4(E) is optimized to low side
LO frequency plans for 1.4 - 1.5 GHz RF LTE band
applications.
Electrical Specifications, T_A = +25° C, LO = 0 dBm, Vcc1, 2, 3, = +5V
Nominal Supply
Parameter
Icc = 105 mA ^[1]
Min.
Typ. Max.
Icc = 80 mA ^[1]
Typ.
Icc = 60 mA ^[1]
Typ.
Icc = 120mA ^[2]
Min.
Typ.
Max.
Units
Frequency Range, RF
0.7 - 1.1
1.4 - 1.5
GHz
Frequency Range, LO
0.85 - 1.25
1.1 - 1.5
GHz
LO Injection Type
High Side
Low Side
Frequency Range, IF
DC to 500
50 - 250
MHz
Conversion Loss
7.5
9.5
7.5
7.5
8
10
dB
Noise Figure (SSB)
7.5
7.5
7.5
8
dB
LO to RF Isolation
18
24
26
28
20
36
dB
LO to IF Isolation
30
41
41
42
28
39
dB
RF to IF Isolation
27
36
36
35
27
38
dB
IP3 (Input)
34
32.5
31.5
32
dBm
1 dB Compression (Input)
25
24.5
23.5
25
dBm
LO Drive Input Level (Typical)
-3 to +3
-3 to +3
-3 to +3
-3 to +3
dBm
Gate Bias Voltage G_BIAS
3.5
3.5
3.5
2.5
V
Supply Current Icc Total
105
125
80
60
120
140
mA
[1] Unless otherwise noted all measurements performed for 0.7 - 1.1 GHz RF band as downconverter with high side LO & IF = 150 MHz,
Icc = 105 mA, G_Bias = 3.5 V
[2] Unless otherwise noted all measurements performed for 1.4 - 1.5 GHz RF LTE band as downconverter with low side LO & IF = 140 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]