BB302C Datasheet, PDF (9/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302C
Sparameter (V_DS = V_G1 = 9V, V_G2S = 6V, R_G = 120kΩ, Zo = 50Ω)
S11
f (MHz) MAG
50
0.988
100 0.986
150 0.979
200 0.964
250 0.948
300 0.939
350 0.920
400 0.904
450 0.885
500 0.864
550 0.848
600 0.826
650 0.808
700 0.789
750 0.773
800 0.755
850 0.735
900 0.721
950 0.703
1000 0.677
ANG
–5.2
–10.4
–16.0
–21.5
–26.9
–32.0
–37.3
–42.3
–47.1
–51.7
–56.5
–60.9
–65.0
–69.4
–73.7
–77.9
–82.1
–86.3
–90.7
–93.9
S21
MAG
2.13
2.13
2.12
2.08
2.04
2.00
1.95
1.91
1.86
1.81
1.76
1.70
1.66
1.61
1.56
1.51
1.47
1.42
1.39
1.34
ANG
174.1
167.9
161.6
155.2
149.1
143.0
137.3
131.5
125.7
120.1
115.1
110.1
104.7
100.3
95.4
90.5
85.9
81.3
76.9
72.4
S12
MAG
0.00052
0.00087
0.00156
0.00226
0.00254
0.00339
0.00335
0.00338
0.00351
0.00347
0.00355
0.00300
0.00289
0.00246
0.00211
0.00166
0.00165
0.00123
0.00176
0.00204
ANG
90.0
72.5
79.4
78.4
71.0
72.0
59.0
66.3
62.2
56.6
61.5
61.4
51.1
57.6
70.0
77.5
114.5
114.5
145.8
164.0
S22
MAG
0.985
0.993
0.992
0.990
0.987
0.985
0.982
0.978
0.974
0.970
0.966
0.961
0.957
0.952
0.947
0.943
0.937
0.933
0.927
0.923
ANG
–1.3
–3.6
–5.5
–7.5
–9.6
–11.4
–13.3
–15.3
–17.1
–18.9
–21.0
–22.7
–24.5
–26.6
–28.3
–30.2
–32.2
–34.1
–35.9
–37.9