BB302C Datasheet, PDF (7/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Noise Figure vs. Drain Current
4
V _DS = 9 V
V _G1= 9 V
3
V _G2S = 6 V
R_G= variable
f = 200 MHz
2
1
0
5 10 15 20 25 30
Drain Current I _D (mA)
BB302C
Drain Current vs. Gate Resistance
30
25
20
15
10
V _DS = 9 V
5 _{V G1= 9 V}
V _G2S = 6 V
0
10 20 50
100 200
500 1000
Gate Resistance R _G (k Ω)
Gain Reduction vs.
Gate2 to Source Voltage
60
V _DS = 9 V
50
V _G1= 9 V
V _G2S = 6 V
40
R_G= 120 k Ω
f = 200 MHz
30
20
10
0 _{1 2 34 5 6 7}
Gate2 to Source Voltage V _G2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
6
5
4
3
2
V _DS = 9 V
1
V _G1= 9 V
R_G= 120 k Ω
f = 1 MHz
0
1
2
3
4
5
6
Gate2 to Source Voltage V _G2S (V)