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| BB302C Datasheet, PDF (3/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier | |||
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Main Characteristics
BB302C
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
Gate 2
RG
VG1
Gate 1
Drain
A
ID
Source
Application Circuit
VAGC = 6 to 0.3 V
BBFET
V DS = 9 V
RFC
Output
Input
RG
V GG = 9 V
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