BB302C Datasheet, PDF (5/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Drain Current vs. Gate1 Voltege
20
V _DS = 9 V
16 ^{R G = 120 k Ω}
6V
5V
12
4V
8
3V
2V
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
BB302C
Drain Current vs. Gate1 Voltege
20
V _DS = 9 V
R _G = 150 k Ω
16
6V
12
5V
4V
8
3V
2V
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
V _DS = 9 V
6V
R _G = 100 k Ω
5V
20 f = 1 kHz
4V
3V
15
10
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V _G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
V _DS = 9 V
6V
R _G = 120 k Ω
5V
20 _{f = 1 kHz}
4V
3V
15
10
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V _G1 (V)