BB402M Datasheet, PDF (8/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB402M
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
—10
—.2
—5
—4
—3
—.4
—2
—.6
—.8 _—1
—1.5
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90¡ ^{Scale: 1 / div.}
120¡
60¡
150¡
30¡
180¡
0¡
—150¡
—30¡
—120¡
—60¡
—90¡
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90¡ ^{Scale: 0.01 / div.}
120¡
60¡
150¡
30¡
180¡
0¡
—150¡
—30¡
—120¡
—90¡
—60¡
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
—10
—.2
—5
—4
—3
—.4
—2
—.6
—.8 _—1
—1.5
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 1000 MHz (50 MHz step)
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