BB402M Datasheet, PDF (4/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB402M
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (¡C)
Typical Output Characteristics
25
V_G2S = 6 V
V _G1= V_DS
20
15
10
1102110522800k00^Ω_kkkk^{ΩΩΩΩ}
5
R G ^{= 270 k Ω}
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Drain Current vs.
Gate2 to Source Voltage
25
68 ^{k Ω}
20
82 k ^Ω
15
100 k Ω
120 ^k Ω
10
150 k Ω
180 k Ω
200 ^{k Ω}
5
R _G = 220 ^{k Ω}
V _DS = V_G1 = 9 V
0
1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage V_G2S (V)
Drain Current vs. Gate1 Voltage
20
V _DS = 9 V
R _G = 100 k Ω
6V
16
5V
4V
12
3V
2V
8
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V _G1 (V)
4