BB402M Datasheet, PDF (6/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB402M
Forward Transfer Admittance
vs. Gate1 Voltage
25
V _DS = 9 V
R _G = 150 k Ω
20 _{f = 1 kHz}
6V 5V 4V
3V
15
2V
10
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V _G1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10
V _DS = 9 V
5
V _G1= 9 V
V _G2S = 6 V
f = 200 MHz
0
10 20 50
100 200
500 1000
Gate Resistance R _G (k Ω)
Noise Figure vs. Gate Resistance
4
V _DS = 9 V
V _G1= 9 V
3 ^V G2S ^{= 6 V}
f = 200 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance R _G (k Ω)
Power Gain vs. Drain Current
30
25
20
15
10 V DS = 9 V
V _G1= 9 V
5
V _G2S = 6 V
R_G= variable
f = 200 MHz
0
5 10 15 20 25 30
Drain Current I _D (mA)
6