BB402M Datasheet, PDF (2/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB402M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
V_G2S
I_D
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 12
Gate1 to source breakdown voltage V_(BR)G1SS +10
Gate2 to source breakdown voltage V_(BR)G2SS ±10
Gate1 to source cutoff current
I _G1SS
—
Gate2 to source cutoff current
I _G2SS
—
Gate1 to source cutoff voltage
V_G1S(off)
0.4
Gate2 to source cutoff voltage
V_G2S(off)
0.4
Drain current
I _D(op)
9
Forward transfer admittance
|y_fs|
15
Input capacitance
c _iss
2.2
Output capacitance
c _oss
0.8
Reverse transfer capacitance
c _rss
—
Power gain
PG
22
Noise figure
NF
—
Ratings
Unit
12
V
+10
V
–0
±10
V
25
mA
150
mW
150
°C
–55 to +150
°C
Typ Max Unit
—
—
V
—
—
V
—
—
V
—
+100 nA
—
±100 nA
0.7 1.0 V
0.7 1.0 V
13
18
mA
20
—
mS
3.0 4.0 pF
1.1 1.5 pF
0.017 0.04 pF
26
—
dB
1.7 2.2 dB
Test Conditions
I_D = 200µA, V_G1S = V_G2S = 0
I_G1 = +10µA, V_G2S = V_DS = 0
I_G2 = ±10µA, V_G1S = V_DS = 0
V_G1S = +9V, V_G2S = V_DS = 0
V_G2S = ±9V, V_G1S = V_DS = 0
V_DS = 9V, V_G2S = 6V, I_D = 100µA
V_DS = 9V, V_G1S = 9V, I_D = 100µA
V_DS = 9V, V_G1 = 9V, V_G2S = 6V
R_G = 120kΩ
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 120kΩ, f = 1kHz
V_DS = 9V, V_G1 = 9V
V_G2S =6V, R_G = 120kΩ
f = 1MHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 120kΩ, f = 200MHz
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