HAT2033R Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Reverse Drain Current vs.
Souece to Drain Voltage
20
16
12 ^{10 V}
5V
8
V_GS = 0, –5 V
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
HAT2033R/HAT2033RJ
Maximun Avalanche Energy vs.
Channel Temperature Derating
5
I _AP = 7 A
4
V_DD = 25 V
L = 100 µH
duty < 0.1 %
3
Rg > 50 Ω
2
1
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
L
I AP
Monitor
D. U. T
50 Ω
VDD
Avalanche Waveform
E_AR =
1
2
• L • I _AP²â€¢
V_DSS
V_DSS – V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
7