HAT2033R Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2033R/HAT2033RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V_(BR)DSS
Gate to source breakdown voltage
V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltage
HAT2033R I_DSS
drain current
HAT2033RJ I_DSS
Zero gate voltage
HAT2033R I_DSS
drain current
HAT2033RJ I_DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
60
± 20
—
—
—
—
—
1.2
—
—
6.5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t _d(on)
—
t_r
—
t _d(off)
—
t_f
—
V_DF
—
t _rr
—
Note: 4. Pulse test
Typ
—
—
—
—
—
—
—
—
0.03
0.04
10
740
370
130
13
55
140
95
0.82
45
Max Unit
—V
—V
± 10 µA
1
µA
0.1 µA
—
µA
10 µA
2.2 V
0.038 Ω
0.053 Ω
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
1.07 V
— ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 16 V, V_DS = 0
V_DS = 60 V, V_GS = 0
V_DS =4 8V , V_GS = 0
Ta = 125°C
V_DS = 10 V, I _D = 1 mA
I_D = 4 A, V_GS = 10 V ^Note4
I_D = 4 A, V_GS = 4 V ^Note4
I_D = 4 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1MHz
V_GS =10 V, I_D = 4 A
V_DD ≅ 30 V
IF = 7 A, V_GS = 0 ^Note4
IF = 7 A , V_GS = 0
diF/ dt = 50 A/µs
3