HAT2033R Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2033R/HAT2033RJ
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
V_GS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I _DR (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
Coss
100
50
Crss
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
100
20
I_D=7A
80
16
V _DD = 50 V
60
25 V
10 V
V_DS
40
V_{GS 12}
8
20
V _DD = 50 V
4
25 V
10 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
1000
Switching Characteristics
300
t _d(off)
100
tf
30
tr
t _d(on)
10
3
V_GS = 10 V, V _DD = 3 0 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
6