HAT2033R Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2033R/HAT2033RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT2033R
HAT2033RJ
V_DSS
V_GSS
I_D
I ^Note1
D(pulse)
I _DR
I ^Note4
AP
60
± 20
7
56
7
—
7
Avalanche energy
HAT2033R
E Note4
AR
—
HAT2033RJ
4.2
Channel dissipation
Pch ^Note2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
– 55 to + 150
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. Value at Tch=25°C, Rg≥50Ω
Unit
V
V
A
A
A
—
A
—
mJ
W
°C
°C
2