BB504C Datasheet, PDF (7/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Drain Current vs. Gate Resistance
30
20
10
V DS = VG1 = 5 V
V_G2S = 4 V
0
10 20 50 100 200 500 1000
Gate Resistance R _G (k Ω )
BB504C
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 V _DS = VG1 = 5 V
R G = 120 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V _G2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
V_DS = V_G1 = 5 V
40 ^{R G = 120 kΩ}
f = 200MHz
50
4
3
2
1
0
Gate2 to Source Voltage V _G2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
V _DS = V_G1 = 5 V
40 R G = 120 kΩ
f = 900MHz
50
4
3
2
1
0
Gate2 to Source Voltage V _G2S (V)
7