BB504C Datasheet, PDF (2/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

BB504C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
I_D
Channel power dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Ratings
Unit
6
V
+6
V
–0
+6
V
–0
30
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS
6
Gate1 to source breakdown
voltage
V_(BR)G1SS +6
Gate2 to source breakdown
voltage
V_(BR)G2SS +6
Gate1 to source cutoff current I_G1SS
—
Gate2 to source cutoff current I_G2SS
—
Gate1 to source cutoff voltage V_G1S(off) 0.6
Gate2 to source cutoff voltage V_G2S(off) 0.6
Drain current
I _D(op)
13
Forward transfer admittance |y_fs|
24
Input capacitance
c _iss
1.7
Output capacitance
c _oss
1.0
Reverse transfer capacitance c_rss
—
Power gain (1)
PG
25
Noise figure (1)
Power gain (2)
NF
—
PG
17
Noise figure (2)
NF
—
Typ Max Unit Test Conditions
—
—
V
I_D = 200µA, V_G1S = V_G2S = 0
—
—
V
I_G1 = +10µA, V_G2S = V_DS = 0
—
—
V
I_G2 = +10µA, V_G1S = V_DS = 0
—
+100 nA
—
+100 nA
0.85 1.1 V
0.85 1.1 V
16
19
mA
29
34
mS
2.1 2.5 pF
1.4 1.8 pF
0.027 0.05 pF
30
—
dB
1.0 1.8 dB
22
—
dB
1.75 2.3 dB
V_G1S = +5V, V_G2S = V_DS = 0
V_G2S = +5V, V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 4V, I_D = 100µA
V_DS = 5V, V_G1S = 5V, I_D = 100µA
V_DS = 5V, V_G1 = 5V
V_G2S = 4V, R_G = 120kΩ
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 120kΩ, f = 1kHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 120kΩ
f = 1MHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 120kΩ
f = 200MHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 120kΩ
f = 900MHz
2