BB504C Datasheet, PDF (6/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

BB504C
Power Gain vs. Gate Resistance
40
35
30
25
20
V _DS = 5 V
15
V _G1= 5 V
V _G2S = 4 V
f = 200 MHz
10
10 20 50 100 200 500 1000
Gate Resistance R _G (k Ω )
Noise Figure vs. Gate Resistance
4
V _DS = 5 V
V _G1= 5 V
3 ^V G2S ^{= 4 V}
f = 200MHz
2
1
0
10 20 50 100 200 500 1000
Gate Resistance R_G (k Ω)
Power Gain vs. Gate Resistance
40
35
30
25
20
V _DS = 5 V
15
V _G1= 5 V
V _G2S = 4 V
f = 900 MHz
10
10 20 50
100 200
500 1000
Gate Resistance R _G (k Ω )
Noise Figure vs. Gate Resistance
4
V _DS = 5V
V _G1= 5 V
3 ^V G2S ^{= 4 V}
f = 900 MHz
2
1
0
10 20 50 100 200 500 1000
Gate Resistance R_G (k Ω)
6