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BB504C Datasheet, PDF (4/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
BB504C
• 900 MHz Power Gain, Noise Figure Test Circuit
VG1 VG2
C4
C5
VD
C6
Input
R1
R2
C3
G2
G1
L1 L2
R3
RFC
D
Output
L3 L4
S
C1
C2
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
120 kΩ
47 kΩ
4.7 kΩ
L1:
10
21
L3:
29
L2:
26
L4:
18
(Φ1mm Copper wire)
Unit:mm
RFC : Φ1mm Copper wire with enamel 4turns inside dia 6mm
4