BB305C Datasheet, PDF (7/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 5 V
R _G = 100 k _Ω
24 _{f = 1 kHz}
4V
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
BB305C
Power Gain vs. Gate Resistance
40
35
30
25
20
V _DS = 5 V
15
V _G1= 5 V
V _G2S = 4 V
f = 200 MHz
10
10 20 50
100 200
500 1000
Gate Resistance R _G (k Ω )
Noise Figure vs. Gate Resistance
4
V _DS = 5 V
V _G1= 5 V
3 ^V G2S ^{= 4 V}
f = 200 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance R_G (k Ω)
Power Gain vs. Drain Current
40
35
30
25
20
V _DS = 5 V
V _G1= 5 V
15
V _G2S = 4 V
R_G= variable
f = 200 MHz
10
0
5 10 15 20 25 30
Drain Current I_D (mA)
7