BB305C Datasheet, PDF (2/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
12
V
+10
V
–0
+10
V
25
mA
100
mW
150
°C
–55 to +150
°C
2