BB305C Datasheet, PDF (6/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305C
Drain Current vs. Gate1 Voltege
20
V _DS = 5 V
16 ^{R G = 82 k Ω}
12
4V
8
3V
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Voltege
20
V _DS = 5 V
16 ^{R G = 100 k Ω}
12
4V
8
3V
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 5 V
R _G = 68 k Ω _{4 V}
24 f = 1 kHz
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 5 V
R _G = 82 k Ω
4V
24 _{f = 1 kHz}
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
6