R1LP0408C Datasheet, PDF(6/14 Page) Hitachi Semiconductor – Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)

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R1LP0408C Datasheet, PDF (6/14 Pages) Hitachi Semiconductor – Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)

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R1LP0408C-I Series

DC Characteristics

Parameter

Symbol Min Typ*1 Max Unit Test conditions

Input leakage current

|ILI|

Output leakage current

|ILO|

Operating current

ICC

Average operating current

ICC1

ICC2

Standby current

ISB

Standby current to +85Â°C

ISB1

to +40Â°C

ISB1

â20Â°C to +25Â°C

ISB1

ï£§ï£§

ÂµA Vin = VSS to VCC

ï£§ ï£§ 1 ÂµA CS# = VIH or OE# = VIH or

WE# = VIL or VI/O = VSS to VCC

ï£§ 1.5 3

mA CS# = VIL,

Others = VIH/ VIL, II/O = 0 mA

ï£§8

25 mA Min. cycle, duty = 100%,

CS# = VIL, Others = VIH/VIL

II/O = 0 mA

ï£§2

5 mA Cycle time = 1 Âµs,

duty = 100%,

II/O = 0 mA, CS# â¤ 0.2 V,

VIH â¥ VCC â 0.2 V, VIL â¤ 0.2 V

ï£§ 0.1

ï£§ï£§

0.5 mA

20*2 ÂµA

10*3 ÂµA

CS# = VIH

Vin â¥ 0 V, CS# â¥ VCC â 0.2 V

ï£§ 1.0*2 10*2 ÂµA

ï£§ 1.0*3 3*3 ÂµA

ï£§ 0.8*2 10*2 ÂµA

ï£§ 0.8*3 3*3 ÂµA

Output low voltage

VOL

ï£§ ï£§ 0.4 V IOL = 2.1 mA

Output high voltage

VOH

2.4 ï£§ ï£§ V IOH = â1.0 mA

VOH2

2.6 ï£§ ï£§ V IOH = â0.1 mA

Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25Â°C and specified loading, and not guaranteed.

2. L version. (â7LI)

3. SL version. (â5SI)

Capacitance

(Ta = +25Â°C, f = 1.0 MHz)

Parameter

Symbol Min Typ Max

Input capacitance

Cin

ï£§ï£§8

Input/output capacitance

CI/O

ï£§ ï£§ 10

Note: 1. This parameter is sampled and not 100% tested.

Unit

Test conditions

Vin = 0 V

VI/O = 0 V

Note

Rev.1.00, Aug.01.2003, page 6 of 13

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