R1LP0408C Datasheet, PDF (5/14 Pages) Hitachi Semiconductor – Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)

R1LP0408C-I Series
Operation Table
WE# CS# OE# Mode
×
H
×
Not selected
H
L
H
Output disable
H
L
L
Read
L
L
H
Write
L
L
L
Write
Note: H: V_IH, L: V_IL, ×: V_IH or V_IL
V_CC current
I_SB, I_SB1
I_CC
I_CC
I_CC
I_CC
I/O0 to I/O7
High-Z
High-Z
Dout
Din
Din
Ref. cycle


Read cycle
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to V_SS
Terminal voltage on any pin relative to V_SS
Power dissipation
Operating temperature
V_CC
V_T
P_T
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Notes: 1. V_T min: −3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +7.0 V.
Value
Unit
−0.5 to +7.0
V
−0.5*¹ to V_CC + 0.3*²
V
0.7
W
−40 to +85
°C
−65 to +150
°C
−40 to +85
°C
DC Operating Conditions
(Ta = −40 to +85°C)
Parameter
Symbol
Min
Supply voltage
V_CC
4.5
V_SS
0
Input high voltage
V_IH
Input low voltage
V_IL
2.2
−0.3*¹
Note: 1. V_IL min: −3.0 V for pulse half-width ≤ 30 ns.
Typ
Max
Unit
5.0
5.5
V
0
0
V

V_CC + 0.3
V

0.8
V
Rev.1.00, Aug.01.2003, page 5 of 13