HN58V65A Datasheet, PDF (6/27 Pages) Hitachi Semiconductor – 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)

HN58V65A Series, HN58V66A Series
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
Input voltage
Operating temperature
V_CC
V_SS
V_IL
V_IH
V_H * ⁴
Topr
2.7
—
0
0
–0.3*¹
—
1.9*²
—
V_CC – 0.5 —
0
—
Notes: 1. V_IL min: –1.0 V for pulse width ≤ 50 ns.
2. V_IH = 2.2 V for V_CC = 3.6 to 5.5 V.
3. V_IH max: V_CC + 1.0 V for pulse width ≤ 50 ns.
4. This function is supported by only the HN58V66A series.
5. V_IL = 0.8 V for V_CC = 3.6 V to 5.5 V
Max
Unit
5.5
V
0
V
0.6*⁵
V
V_CC + 0.3*³ V
V_CC + 1.0 V
70
˚C
DC Characteristics (Ta = 0 to + 70˚C, V_CC = 2.7 to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V_CC curren
Operating V_CC current
Symbol Min
I _LI
—
I _LO
—
I _CC1
—
I _CC2
—
I _CC3
—
—
Typ
Max
—
2*¹
—
2
1 to 2 5
—
1
—
6
—
8
—
—
12
—
—
25
Output low voltage
V_OL
—
—
0.4
Output high voltage
V_OH
V_CC × 0.8 —
—
Note: 1. I_LI on RES : 100 µA max (only the HN58V66A series)
Unit
µA
µA
µA
mA
mA
mA
mA
mA
V
V
Test conditions
Vin = 0 V to V_CC
Vout = 0 V to V_CC
CE = V_CC – 0.3 V to V_CC + 1.0 V
CE = V_IH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs at V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs at V_CC = 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 100 ns at V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 70 ns at V_CC = 5.5 V
I_OL = 2.1 mA
I_OH = –400 µA
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance
Cin*¹
—
—
6
pF
Vin = 0 V
Output capacitance
Cout*¹
—
—
12
pF
Vout = 0 V
Note: 1. This parameter is sampled and not 100% tested.