HAT2028R Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2028R/HAT2028RJ
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 50 A/µs
5
V_GS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
1000
500
200
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
50
Crss
20
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
100
20
I _D= 4 A
80
16
60 _VDS
V _DD = 10 V
25 V
12
50 V
40
V_GS
8
20
V _DD = 50 V
4
25 V
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
1000
Switching Characteristics
300
tr
100
tf
30
t _d(off)
10
t _d(on)
3 _{VGS = 4 V, V DD = 30 V}
PW = 3 µs, duty < 1 %
1
0.1 0.2 0.5 1 2
5 10
Drain Current I _D (A)
6