HAT2028R Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2028R/HAT2028RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
60
V
Gate to source voltage
V_GSS
± 20
V
Drain current
I_D
4
A
Drain peak current
I Note1
D(pulse)
32
A
Body-drain diode reverse drain current
I _DR
4
A
Avalanche current
HAT2028R
I Note4
AP
—
—
HAT2028RJ
4
A
Avalanche energy
HAT2028R
E Note4
AR
—
—
HAT2028RJ
1.37
mJ
Channel dissipation
Pch ^Note2
2
W
Channel dissipation
Pch ^Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
4. Value at Tch=25°C, Rg≥50Ω
2