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HAT2028R Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching
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HAT2028R/HAT2028RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdownvoltage
V(BR)DSS
Gate to source breakdownvoltage
V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltage
HAT2028R IDSS
drain current
HAT2028RJ IDSS
Zero gate voltage
HAT2028R IDSS
drain current
HAT2028RJ IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state resistance RDS(on)
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
60
± 20
—
—
—
—
—
1.3
—
—
3.3
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forwardvoltage
VDF
—
Body–drain diode reverse recovery time trr
—
Note: 5. Pulse test
Typ
—
—
—
—
—
—
—
—
0.08
0.12
5
280
150
55
15
100
35
45
0.88
40
Max
—
—
± 10
1
0.1
—
10
2.3
0.1
0.16
—
—
—
—
—
—
—
—
1.15
—
Unit
V
V
µA
µA
µA
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 16 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 48 V, VGS = 0
Ta = 125°C
VDS = 10 V, I D = 1 mA
ID = 2 A, VGS = 10 V Note5
ID = 2 A, VGS = 4 V Note5
ID = 2 A, VDS = 10 V Note5
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 2 A
VDD ≅ 30 V
IF = 4 A, VGS = 0 Note5
IF = 4 A, VGS = 0
diF/ dt = 50 A/µs
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