HAT2028R Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2028R/HAT2028RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
30
10
3
1
0.3
0.1
10 µs
100 _µs
PW
DC
Operation in
this area is
Operation
=
(PW
limited by R DS(on)
1 _ms
10 _ms
< ₁^N₀^o_ste)6
Ta = 25°C
0.03 _{1 shot Pulse}
0.01 ^{1 Drive Operation}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10V 8 V
20
6V
5V
16
4.5 V
12
4V
8
3.5 V
4
3V
Pulse Test
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
20
–25°C
16
Tc = 75°C
25°C
12
8
4
V _DS = 10 V
Pulse Test
0
2
4
6
8
10
Gate to Source Voltage V GS (V)
4