HAT2027R Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switchin

HAT2027R
Switching Characteristics
500
200
tr
tf
100
t _d(off)
50
t _d(on)
20
10
5
0.2
V_GS = 4 V, V _DD = 10 V
PW = 3 µs, duty < 1 %
0.5 1 2
5 10 20
Drain Current I _D (A)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
4V
50Ω
VDD
= 10 V
Switching Time Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
6