HAT2027R Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switchin

HAT2027R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 20 A/µs
5
V_GS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0
4
8
12 16
20
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
10
I _D= 7 A
40
8
V _DD = 5 V
10 V
30
20 V
6
V_DS
20
V_GS
4
10
V _DD = 20 V
2
10 V
5V
0
0
4
8 12 16 20
Gate Charge Qg (nc)
Reverse Drain Current vs.
Souece to Drain Voltage
50
Pulse Test
40
V_GS = 5 V
30
0, –5 V
20
10
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
5