HAT2027R Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switchin

HAT2027R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
20
V
Gate to source voltage
V_GSS
± 12
V
Drain current
I_D
7
A
Drain peak current
I Note1
D(pulse)
56
A
Body-drain diode reverse drain current I_DR
7
A
Channel dissipation
Pch ^Note2
2
W
Channel dissipation
Pch ^Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
20
± 12
—
—
0.5
—
—
9
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 4. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
± 10 µA
—
10
µA
—
1.5 V
0.03 0.038 Ω
0.038 0.053 Ω
14
—
S
720 —
pF
450 —
pF
185 —
pF
28
—
ns
145 —
ns
100 —
ns
125 —
ns
0.9 1.4 V
60
—
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 10 V, V_DS = 0
V_DS = 20 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 4 A, V_GS = 4 V ^Note4
I_D = 4 A, V_GS = 2.5 V ^Note4
I_D = 4 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1MHz
V_GS = 4 V, I_D = 4 A
V_DD ≅ 10 V
IF = 7 A, V_GS = 0 ^Note4
IF = 7 A, V_GS = 0
diF/ dt = 20 A/µs
2