HAT2027R Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switchin

Main Characteristics
HAT2027R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs
30
100 µs
10
3
1
0.3
Othpiseararetioa^Dn^C_isi^On^{perationP(WPW=<1}1^10N₀^omm_s^te₎^ss₅
0.1 ^{limited by R DS(on)}
0.03 _{Ta = 25 °C}
0.01 ^{1 shot Pulse}
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V
6V
Pulse Test
40
5V
4.5 V
30
4V
3.5 V
3V
20
2.5 V
10
2V
V_GS = 1.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
50
V _DS = 10 V
Pulse Test
40
–25°C
30
25°C
Tc = 75°C
20
10
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
3