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HAT1033T Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1033T
Reverse Drain Current vs.
Source to Drain Voltage
â20
Pulse Test
â16
VGS = â5 V
â12
â8
0, 5 V
â4
0
â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 µ 100 µ 1 m
θ ch â f(t) = γ s (t) ⢠θ ch â f
θ ch â f = 139 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
6
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