HAT1033T Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

Main Characteristics
HAT1033T
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
–100
–30
Maximum Safe Operation Area
10 µs
100 µs
–10
1 ms
–3
–1
–0.3
–0.1
OthpiseararetioaDnCisiOnperatP1io0Wn(mP=Ws^N<o1t0^e_s⁴₎
limited by R DS(on)
–0.03 _{Ta = 25 °C}
–0.01 ^{1 shot pulse}
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
–10 V
–20
–4 V
–6 V
–2.5 V
–16
Pulse Test
–12
–2 V
–8
–4
V_GS = –1.5 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
–20
Tc = –25 °C
–16
25 °C
–12
75 °C
–8
–4
V _DS = –10 V
Pulse Test
0
–1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
3