HAT1033T Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1033T
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-532H (Z)
9th. Edition
February 1999
TSSOP–8
158
DDD
87 ^{6 5}
123 ⁴
4
G
SSSS
2 36 7
1, 5, 8 Drain
2, 3, 6, 7 Source
4
Gate