HAT1033T Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1033T
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 20 A / µs
5
V_GS = 0, Ta = 25 °C
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
10
f = 1 MHz
0
–4
–8 –12 -16 –20
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V _DD= –5 V
–10 V
–10
–20 V
–2
–20 _{V DS}
–30
V _DD = –20 V
–10 V
–5 V
V GS
–4
–6
–40
–50 ^{I D = –3.5 A}
0
4
8 12 16
Gate Charge Qg (nc)
–8
–10
20
Switching Characteristics
500
200
t _d(off)
100
50
tr
tf
20
t _d(on)
10
V _GS = –4 V, V _DD = –10 V
5
PW = 5 µs, duty < 1 %
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I _D (A)
5