HAT1025R Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1025R
Switching Characteristics
500
200
t _d(off)
100
tf
tr
50
t _d(on)
20
10 _{V GS = –4 V, V DD = –10 V}
5 ^{PW = 3 µs, duty < 1 %}
–0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I _D (A)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
–4 V
50Ω
VDD
= –10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t_f
6