HAT1025R Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1025R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
– 20
V
Gate to source voltage
V_GSS
± 10
V
Drain current
I_D
– 4.5
A
Drain peak current
I Note1
D(pulse)
– 36
A
Body–drain diode reverse drain current I_DR
– 4.5
A
Channel dissipation
Pch ^Note2
2
W
Channel dissipation
Pch ^Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
– 20
± 10
—
—
– 0.5
—
—
4.5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 4. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
± 10 µA
—
– 10 µA
—
– 1.5 V
0.065 0.095 Ω
0.09 0.15 Ω
7
—
S
860 —
pF
450 —
pF
150 —
pF
20
—
ns
120 —
ns
120 —
ns
100 —
ns
– 0.9 – 1.4 V
60
—
ns
Test Conditions
I_D = – 10 mA, V_GS = 0
I_G = ± 100µA, V_DS = 0
V_GS = ± 8 V, V_DS = 0
V_DS = – 20 V, V_GS = 0
V_DS = – 10 V, I _D = – 1 mA
I_D = – 3 A, V_GS = – 4 V ^Note4
I_D = – 3 A, V_GS = – 2.5 V ^Note4
I_D = – 3 A, V_DS = – 10 V ^Note4
V_DS = – 10 V
V_GS = 0
f = 1MHz
V_GS = – 4 V, I_D = – 3 A
V_DD ≅ – 10 V
IF = – 4.5 A, V_GS = 0 ^Note4
IF = – 4.5 A, V_GS = 0
diF/ dt = 20 A/µs
2